Typical Characteristics: P-Channel
1
V GS = -10V
-4.5V
2.2
0.8
-6.0V
-4.0V
-3.5V
2
V GS = -3.0V
1.8
0.6
1.6
-3.5V
0.4
-3.0V
1.4
-4.0V
-4.5V
0.2
1.2
1
-6.0V
-10V
0
0.8
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.8
-I D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
5
1.6
I D = -0.34A
V GS = -10V
4
I D = -0.17A
1.4
1.2
1
0.8
3
2
T A = 25 o C
T A = 125 o C
1
0.6
0.4
0
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C)
o
Figure 13. On-Resistance Variation
withTemperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
1
V DS = -5V
T A = -55 o C
25 o C
10
V GS = 0V
0.8
0.6
0.4
0.2
125 o C
1
0.1
0.01
0.001
T A = 125 o C
25 o C
-55 o C
0
1
2 3 4
-V GS , GATE TO SOURCE VOLTAGE (V)
5
0.0001
0.2
0.4 0.6 0.8 1
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDC7001C Rev B (W)
相关PDF资料
NDC7002N_SB9G007 MOSFET N-CH DUAL 50V 6-SSOT
NDC7003P MOSFET 2P-CH 60V 340MA SSOT6
NDD03N50ZT4G MOSFET N-CH 500V 2.6A DPAK
NDD04N50Z-1G MOSFET N-CH 500V 3A IPAK
NDD05N50ZT4G MOSFET N-CH 500V 5A DPAK
NDF02N60ZH MOSFET N CH 600V 2.4A TO220FP
NDF03N60ZH MOSFET N CH 600V 4.8A TO220FP
NDF04N60ZH MOSFET N CH 600V 4.8A TO220FP
相关代理商/技术参数
NDC7001C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
NDC7001C 制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6
NDC7001C_Q 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDC7002 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7002N 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
NDC7002N_Q 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube